BAS70-04-7-F

Diode Arrays Overview

The BAS70-04-7-F is a surface-mount Schottky barrier diode manufactured by Diodes Incorporated. It features a peak repetitive reverse voltage of 70 V and a maximum forward continuous current of 70 mA. The device exhibits a low forward voltage drop, with a maximum of 1000 mV at 15 mA and 410 mV at 1 mA. Reverse recovery time is specified at 2.0 ns for this specific variant. Total capacitance is limited to 2.0 pF at 0 V reverse bias. Power dissipation reaches 200 mW, supported by a thermal resistance junction-to-ambient rating of 625 °C/W. Operating junction temperature ranges from -55 °C to +125 °C.

Diode Arrays Feature Summary

• Fast switching capability with ultra-low reverse recovery time
• PN junction guard ring structure provides transient and ESD protection
• Low turn-on voltage minimizes conduction losses
• Totally lead-free and fully RoHS compliant construction

Diode Arrays Applications

• High-speed signal rectification in consumer electronics
• Clipping and clamping circuits in RF applications
• Temperature compensation networks
• Signal detection modules

Diode Arrays Procurement Notes

Verify the datasheet revision number matches the manufacturing date code on received components. Confirm the SOT-23 package marking corresponds to the K7D product type code. Ensure storage conditions adhere to J-STD-020 Level 1 moisture sensitivity ratings prior to soldering.

Diode Arrays Selection Notes

Select this component when a standard Schottky diode requires enhanced transient robustness due to the integrated PN junction guard ring. The 2.0 ns reverse recovery time distinguishes it from other BAS70 variants like the BAS70-05 or BAS70-06, making it suitable for higher frequency switching requirements within the same voltage and current constraints.

Diode Arrays Part Context

This part belongs to the BAS70 series of surface-mount Schottky barrier diodes produced by Diodes Incorporated. The series includes variants such as BAS70-05 and BAS70-06, which share similar electrical ratings but differ in reverse recovery specifications. The BAS70-04-7-F specifically utilizes the SOT-23 package format for compact surface mount assembly.

Diode Arrays Replacement Considerations

BAS70-05-7-F

Diode Arrays FAQ

What is the specific reverse recovery time for the BAS70-04-7-F?

The reverse recovery time (tRR) for the BAS70-04-7-F is 2.0 ns, measured under conditions where IF = IR = 10mA transitioning to IR = 1.0mA with RL = 100Ω.

How does the BAS70-04-7-F protect against electrostatic discharge?

The device incorporates a PN junction guard ring structure designed specifically to provide protection against transients and electrostatic discharge (ESD).

What is the maximum power dissipation rating?

The maximum power dissipation (PD) is 200 mW, assuming the part is mounted on an FR-4 board with the recommended pad layout.