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BAS70E6433HTMA1 is listed in the Single Diodes range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE SCHOTTKY 70V 70MA PGSOT23. Review the specifications below when checking this part for your BOM.
BAS70E6433HTMA1 is a single silicon Schottky diode from Infineon Technologies, housed in an SOT-23-3 surface-mount package. It features a maximum repetitive peak reverse voltage of 70 V and a forward current rating of 70 mA. The device exhibits a typical forward voltage of 880 mV and a low reverse leakage current of 100 nA at 50 V. Designed for high-speed switching applications, it offers a power dissipation capacity of 250 mW and operates within a junction temperature range up to 150°C.
Verify the specific suffix HTMA1 against official Infineon documentation to confirm exact tape-and-reel specifications and lot traceability requirements. Ensure compatibility with RoHS directives and check for any recent product discontinuation notices or lifecycle changes before finalizing procurement plans.
Select this component when a low-capacitance Schottky barrier diode is required for high-speed switching rather than standard rectification. Consider the 70 mA current limit and 70 V reverse voltage constraints. Evaluate thermal management needs given the 250 mW power dissipation rating in the small SOT-23-3 footprint.
This part belongs to the BAS70 series of Schottky diodes manufactured by Infineon Technologies. The series is designed for general-purpose high-speed switching applications in consumer electronics and telecommunications equipment. The E6433 suffix indicates specific packaging and handling attributes defined by the manufacturer.
Consult official Infineon cross-reference guides for verified substitutes. Generic equivalents may not match the specific reverse leakage or forward voltage characteristics of the original component.
Explore related parts through Rectifiers, Diodes, Discrete Semiconductor Products, all product categories.