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BAS85 L0G is listed in the Single Diodes range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is DIODE SCHOTT 30V 200MA MINI MELF. Review the specifications below when checking this part for your BOM.
The BAS85 L0G is a hermetically sealed glass fast switching Schottky barrier diode manufactured by Taiwan Semiconductor. It features a Mini-MELF package and operates with a maximum repetitive peak reverse voltage of 30 V and an average forward rectified current of 200 mA. The device dissipates up to 200 mW of power and withstands a peak forward surge current of 4 A. Junction temperature ranges from -65°C to +125°C, with a typical forward voltage of 0.8 V at 100 mA.
Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm RoHS compliance and halogen-free status requirements match project specifications. Ensure the Mini-MELF package dimensions align with PCB layout constraints before finalizing procurement orders.
Select this component for applications requiring low stored charge and high-speed switching capabilities within a small form factor. Evaluate thermal management needs based on the 200 mW power dissipation rating. Consider the hermetic seal benefits for environments requiring robust physical protection.
This part belongs to the BAS85 series of Schottky barrier diodes designed for general-purpose fast switching applications. The Mini-MELF package provides a compact solution suitable for surface mount technology. The product line emphasizes reliability through hermetic sealing and compliance with environmental directives.
Consult official substitution lists for verified equivalents. Generic replacements may not match the hermetic sealing or specific electrical tolerances required for critical circuit performance.
The maximum repetitive peak reverse voltage (VRRM) is 30 V.
Yes, it is compliant with the RoHS directive 2011/65/EU and WEEE 2002/96/EC, and is halogen-free according to IEC 61249-2-21.
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