BAS86-M-08

Single Diodes Overview

The BAS86-M is a small signal Schottky diode manufactured by Vishay Semiconductors, housed in the MiniMELF (SOD-80) case. It features a metal-on-silicon barrier protected by a PN junction guard ring against excessive voltage. The device supports a continuous reverse voltage of 50 V and a forward continuous current of 200 mA. Electrical characteristics include a maximum leakage current of 5 µA at 40 V and a typical capacitance of 8 pF at 1 V and 1 MHz. Operating temperatures range from -65 °C to +125 °C.

Single Diodes Feature Summary

• Low turn-on voltage suitable for fast switching applications
• PN junction guard ring protection against electrostatic discharge
• Metal-on-silicon Schottky barrier construction

Single Diodes Applications

• Protection of MOS devices
• Steering and biasing circuits
• Coupling diodes for low logic level applications

Single Diodes Procurement Notes

Verify the specific ordering code suffix when purchasing. The datasheet indicates that BAS86-M is available in tape and reel configurations, with variants such as BAS85-M-18 or BAS86-M-08 listed in the parts table. Confirm packaging codes match project requirements before procurement.

Single Diodes Selection Notes

Select this component for designs requiring low forward voltage drop and fast switching capabilities. Ensure the application operates within the specified ambient temperature range of -65 °C to +125 °C. Validate thermal resistance limits if power dissipation approaches the maximum rating of 200 mW.

Single Diodes Part Context

This component belongs to the BAS86 series of small signal Schottky diodes produced by Vishay General Semiconductor - Diodes Division. It utilizes the SOD-80 package format, providing a compact solution for surface mount assembly in general-purpose electronic circuits.

Single Diodes Replacement Considerations

BAS85-M-18 and BAS86-M-08 are documented alternative part numbers within the same product family.