BAT 68-07W E6327

RF Diode Overview

The BAT68-07W E6327 is a silicon Schottky diode from Infineon Technologies, packaged in SOT343. It features a parallel triple configuration with an inductance of 1.6 nH. The device supports a maximum reverse voltage (VR) of 8 V and a forward current (IF) of 130 mA. Total power dissipation is rated at 150 mW with a junction temperature up to 150 °C. Electrical characteristics include a breakdown voltage of 8 V at 10 µA, a maximum reverse current of 1.2 µA at 60 °C, and a typical forward voltage of 340 mV at 10 mA. Diode capacitance is limited to 1 pF at 1 MHz.

RF Diode Feature Summary

• Parallel triple configuration designed for mixer applications in the VHF/UHF range
• Low parasitic inductance suitable for high-speed switching applications
• Lead-free package compliant with RoHS standards

RF Diode Applications

• Mixer applications in the VHF / UHF range
• High-speed switching applications

RF Diode Procurement Notes

Verify the specific ordering suffix against official documentation to confirm the exact packaging format and tape-and-reel specifications. Confirm that the component meets all required environmental compliance standards for the intended deployment environment before finalizing procurement orders.

RF Diode Selection Notes

Select this component when a parallel triple Schottky diode configuration is required for VHF or UHF frequency operations. Ensure the design accommodates the 8 V reverse voltage limit and the 130 mA forward current rating. Verify that the SOT343 package dimensions align with the target PCB layout constraints.

RF Diode Part Context

This part belongs to the BAT68 series of silicon Schottky diodes manufactured by Infineon Technologies. The series includes various configurations such as single, series, common anode, and parallel pairs/triples housed in packages like SOT23, SOT323, and SOT363. The BAT68-07W specifically utilizes the SOT343 package.

RF Diode Replacement Considerations

BAT68-07WE6327