BAT1504WH2110XTSA1

RF Diode Overview

The BAT1504WH2110XTSA1 is a silicon RF Schottky diode pair from Infineon Technologies, housed in an SOT323-3 package. It features low barrier height and integrated on-chip guard ring protection. Key electrical parameters include a maximum reverse voltage of 4 V, forward current of 110 mA, and total power dissipation of 100 mW. Typical characteristics at 25 °C are a junction capacitance of 0.3 pF at 1 MHz and inductance of 1.4 nH. The device operates within a temperature range of -55 °C to +150 °C.

RF Diode Feature Summary

• Low inductance and low junction capacitance for high-frequency performance up to 12 GHz
• Integrated on-chip guard ring for over-voltage protection
• Lead-free, RoHS compliant, and halogen-free construction

RF Diode Applications

• Mixers and detectors in security system sensor interfaces
• Telematic systems
• Radar systems for industrial use
• Compensators

RF Diode Procurement Notes

Verify the ordering suffix against official documentation to confirm specific packaging or marking variations. Confirm that the component meets all required environmental standards and qualification tests for the intended application environment before finalizing procurement.

RF Diode Selection Notes

Select this component when low barrier height and minimal parasitic capacitance are critical for mixer or detector functions. Ensure the operating frequency does not exceed 12 GHz and that the circuit design accommodates the 4 V reverse voltage limit and 100 mW power dissipation constraints.

RF Diode Part Context

This part belongs to the BAT15 series of silicon RF Schottky diodes. It is specifically designed as a series pair configuration within the industry-standard SOT323-3 package, providing a compact solution for RF signal processing applications requiring low noise and fast switching characteristics.

RF Diode Replacement Considerations

BAT1504WH6327XTSA1 is a confirmed substitute with identical electrical specifications and pinout.