BAT15099E6327HTSA1

$0.85

Description：DIODE SCHOTTKY 4V 100MW SOT143-4
Series：-

SKU:eaa5d93c3afa Category: RF Diodes Brand: Infineon Technologies

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Product introduction

BAT15099E6327HTSA1 is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE SCHOTTKY 4V 100MW SOT143-4. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAT15099E6327HTSA1

Description：DIODE SCHOTTKY 4V 100MW SOT143-4
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Diode Type：Schottky - 2 Independent
Voltage - Peak Reverse (Max)：4V
Current - Max：110 mA
Capacitance @ Vr, F：0.35pF @ 0V, 1MHz
Resistance @ If, F：-
Power Dissipation (Max)：100 mW
Operating Temperature：150°C (TJ)
Package / Case：TO-253-4, TO-253AA
Supplier Device Package：PG-SOT-143-3D
Grade：-
Qualification：-

RF Diode datasheet and documents for BAT15099E6327HTSA1

BAT15099E6327HTSA1

RF Diode Overview

The Infineon BAT15099E6327HTSA1 is a silicon Schottky diode designed for high-frequency applications. It features a dual parallel configuration in an SOT-143 package, suitable for surface mount technology. The device supports a maximum repetitive reverse voltage of 4 V and a forward current of 110 mA. With a low forward voltage of 410 mV and reverse current of 5 uA, it ensures efficient signal handling. Operating temperatures range from -55 C to +150 C, and the component holds AEC-Q100 qualification for automotive reliability.

RF Diode Feature Summary

Optimized for DBS mixer applications up to 12 GHz
Integrated on-chip guard ring for over-voltage protection
Low barrier N-type silicon structure

RF Diode Applications

DBS mixer applications
Phase detection circuits
RF modulation systems

RF Diode Procurement Notes

Verify the complete part number including the HTSA1 suffix to ensure correct packaging and tape-and-reel specifications. Confirm AEC-Q100 qualification requirements if deploying in automotive environments. Cross-reference datasheet electrical limits against system operating conditions to prevent thermal or voltage overstress during procurement planning.

RF Diode Selection Notes

Select this component when low forward voltage and high-speed switching are critical for RF signal integrity. The dual parallel configuration allows for improved current handling compared to single diodes. Ensure the SOT-143 footprint matches the PCB design constraints. Consider the 4 V reverse voltage limit when designing circuits with potential voltage spikes.

RF Diode Part Context

This device belongs to the BAT15 series of silicon Schottky diodes manufactured by Infineon Technologies. It is specifically engineered for radio frequency and microwave applications requiring fast recovery and low noise characteristics. The integration of a guard ring distinguishes it from standard rectifier diodes by providing enhanced robustness against transient over-voltages.