Single Diodes BAT43 R0G product image

BAT43 R0G

  • Description:DIODE SCHOTTKY 30V 200MA DO35
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tape & Box (TB)

SKU:edf3895104d6 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

BAT43 R0G is listed in the Single Diodes range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is DIODE SCHOTTKY 30V 200MA DO35. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for BAT43 R0G

  • Description:DIODE SCHOTTKY 30V 200MA DO35
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tape & Box (TB)
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):30 V
  • Current - Average Rectified (Io):200mA
  • Voltage - Forward (Vf) (Max) @ If:1 V @ 200 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):5 ns
  • Current - Reverse Leakage @ Vr:500 nA @ 25 V
  • Capacitance @ Vr, F:7pF @ 1V, 1MHz
  • Mounting Type:Through Hole
  • Package / Case:DO-204AH, DO-35, Axial
  • Supplier Device Package:DO-35
  • Operating Temperature - Junction:-65°C ~ 125°C
  • Grade:-
  • Qualification:-

Single Diodes datasheet and documents for BAT43 R0G

BAT43 R0G

Single Diodes Overview

The BAT43 R0G is a Schottky barrier diode manufactured by Taiwan Semiconductor Corporation, housed in an SOD-523F surface-mount package. It features a maximum repetitive reverse voltage of 30 V and an average forward rectified current of 200 mA. The device exhibits a typical forward voltage drop of 1 V at 200 mA and a low reverse leakage current of 500 nA at 25 V. It supports a forward surge current of 4 A and operates within a junction temperature range of -55 °C to +150 °C.

Single Diodes Feature Summary

  • Utilizes silicon Schottky technology for high switching efficiency
  • Features low forward voltage drop for improved power efficiency
  • Designed with low reverse leakage current characteristics
  • Constructed in a compact SMD package for automated assembly

Single Diodes Applications

  • High-frequency signal detection circuits
  • Power supply clamping and protection
  • Voltage regulation applications
  • RF mixing and demodulation stages

Single Diodes Procurement Notes

Verify the specific suffix 'R0G' against the manufacturer's official datasheet to confirm tape-and-reel packaging specifications and RoHS compliance status. Ensure the ordering part number matches the exact electrical parameters required for the target circuit design before finalizing procurement.

Single Diodes Selection Notes

Select this component when a small-signal Schottky diode with a 30 V rating and 200 mA current capacity is required in an SOD-523F footprint. Consider its low forward voltage and fast switching speed for high-efficiency signal processing or clamping tasks where standard PN junctions may introduce excessive loss.

Single Diodes Part Context

This component belongs to the BAT43 series of Schottky barrier diodes produced by Taiwan Semiconductor. The series is characterized by silicon construction and is available in various packages including DO-35 and SOD-523F. The BAT43 R0G specifically denotes the surface-mount variant optimized for modern PCB assembly processes.

Single Diodes Replacement Considerations

Compatible substitutes include BAT43W-V from Vishay and BAT43WS-7-F from Diodes Incorporated. Verify that alternative parts match the 30 V reverse voltage, 200 mA current rating, and SOD-523F package dimensions.

BAT43 R0GBAT43 R0G

Click on the inquiry