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BAT54-E3-08 is listed in the Single Diodes range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE SCHOTTKY 30V 200MA SOT233. Review the specifications below when checking this part for your BOM.
BAT54-E3-08 is a single small-signal Schottky diode from Vishay Semiconductors, housed in an SOT-23 surface-mount package. It features a repetitive peak reverse voltage of 30 V and a continuous forward current rating of 200 mA. The device exhibits a low forward voltage drop, reaching up to 800 mV at 100 mA, and a fast reverse recovery time of 5 ns. Electrical characteristics include a maximum leakage current of 2 μA at 25 V and a typical capacitance of 10 pF at 1 MHz. Operating temperatures range from -55 °C to +125 °C.
Verify the specific ordering suffix '-08' corresponds to the required tape-and-reel packaging configuration (3K per 7-inch reel) before procurement. Confirm that the commercial grade designation aligns with project environmental standards. Ensure component authenticity through authorized distribution channels to maintain reliability.
Select this component for circuits requiring low forward voltage drops and rapid switching speeds within a compact SOT-23 footprint. Consider the 30 V reverse voltage limit and 200 mA current capacity when designing power stages. Evaluate thermal resistance requirements if operating near maximum temperature limits.
The BAT54-E3-08 belongs to the BAT54 family of small-signal Schottky diodes manufactured by Vishay General Semiconductor. This series includes various configurations such as dual common anode, common cathode, and serial arrangements. The 'E3' suffix indicates RoHS compliance and lead-free construction, suitable for modern electronics manufacturing processes.
BAT54S-E3-08
The PN junction guard ring protects the device against excessive voltage stresses, specifically providing defense against electrostatic discharge events.
The forward voltage increases with current; it ranges from a minimum of 240 mV at 0.1 mA to a maximum of 800 mV at 100 mA under pulsed test conditions.
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