BAT54BR-G

Overview

The BAT54BR-G is a dual Schottky barrier diode manufactured by Taiwan Semiconductor Corporation. It features two independent diodes in a single SOT-23 surface-mount package, designed for high-speed switching and voltage clamping applications. The device utilizes silicon epitaxial planar technology with guard ring protection to ensure robust performance. Key electrical characteristics include a maximum repetitive peak reverse voltage of 30V and an average forward rectified current of 200mA. The low forward voltage drop minimizes power loss during conduction, while the small plastic SMD package facilitates automated assembly in space-constrained portable electronics.

Feature Summary

• Dual configuration with independent diode elements in a compact SOT-23 package
• Low forward voltage characteristic for efficient signal processing
• Guard ring protected structure for enhanced reliability
• Designed for ultra-high-speed switching operations

Applications

• Ultra high-speed switching circuits
• Voltage clamping and protection applications
• Blocking diodes in power management systems
• Portable equipment signal routing

Procurement Notes

Verify the specific suffix 'G' indicates RoHS compliance and halogen-free status according to Taiwan Semiconductor documentation. Confirm the package type matches the required SOT-23 footprint for PCB layout compatibility. Ensure the manufacturer designation aligns with the intended supply chain requirements. Cross-reference the datasheet revision date to confirm current manufacturing status and parameter stability before finalizing procurement orders.

Selection Notes

Select this component when a dual Schottky configuration is required in a minimal footprint. The 30V reverse voltage rating suits low-voltage signal paths. Consider the 200mA current limit for appropriate load matching. The SOT-23 package offers thermal and mechanical advantages over larger through-hole alternatives. Evaluate forward voltage specifications against system efficiency targets.

Part Context

This component belongs to the BAT54 series of Schottky barrier double diodes. Similar variants include BAT54A, BAT54C, and BAT54S, which may differ in pinning or internal configuration. The series is widely used in consumer electronics for signal handling. Taiwan Semiconductor produces this part alongside other discrete semiconductor devices. The BAT54BR-G specifically denotes a dual diode arrangement within this family.

FAQ

What is the internal configuration of the BAT54BR-G?

It contains two independent Schottky barrier diodes within a single SOT-23 package.

Is the BAT54BR-G suitable for high-frequency applications?

Yes, it is designed for ultra-high-speed switching due to its Schottky technology.

What protection feature is included in the device structure?

The diodes are guard ring protected to enhance reliability and performance.