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The BAT54C_G is a dual common cathode Schottky barrier diode manufactured by onsemi. It features a peak repetitive reverse voltage of 30 V and a maximum average forward current of 100 mA per diode. The device exhibits an extremely fast switching speed with a typical reverse recovery time of 5 ns. It operates within a junction temperature range of -55°C to +125°C and is housed in a compact SOT-23 surface-mount package.
Verify the specific suffix against official documentation, as manufacturer part numbering conventions may vary regarding tape and reel specifications or automotive qualification status. Confirm the exact electrical parameters match the design requirements before procurement. Ensure the component source is authorized to guarantee authenticity and traceability.
Select this component when space constraints require a miniature surface-mount package. It is appropriate for designs needing low forward voltage drop and rapid response times. Verify that the 100 mA current rating meets the load requirements and that the 30 V reverse voltage withstands the circuit's peak inverse voltage conditions.
This component belongs to the BAT54 series of Schottky barrier diodes. These devices are designed for high-speed switching and clamping applications. The series utilizes silicon technology to provide low forward voltage characteristics while maintaining reliability in portable and handheld electronic devices where board space is limited.
BAT54CLT1G
The typical forward voltage is 0.35 V at a forward current of 10 mA.
Yes, the device is AEC-Q101 qualified and PPAP capable.
The maximum non-repetitive peak forward current is 600 mA for pulses less than 10 msec.