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BAT54SD RF is listed in the Single Diodes range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is DIODE SCHOTTKY 30V 200MA SOT363. Review the specifications below when checking this part for your BOM.
The BAT54SD RF is a dual series Schottky barrier diode manufactured by Taiwan Semiconductor Corporation. It features a silicon construction with a 30 V repetitive peak reverse voltage and a 200 mA average forward current rating. The device exhibits a maximum forward voltage of 1 V at specified currents and a low reverse leakage current of 2 µA. Designed for surface mount applications, it operates within a junction temperature range of -55 °C to +125 °C. The component is supplied in a reel packaging format.
Verify the specific suffix designation with the manufacturer to confirm package type and tape/reel specifications. Confirm RoHS compliance status directly through official documentation before procurement. Ensure the ordering quantity aligns with the factory packaging requirements defined in the datasheet.
Select this component when a dual series Schottky configuration is required in a small surface mount footprint. The 30 V rating suits low-voltage signal processing tasks. Verify thermal management requirements against the +125 °C maximum junction temperature limit during design.
This part belongs to the BAT54 series of Schottky barrier rectifiers from Taiwan Semiconductor. The series utilizes silicon technology to provide low conduction losses and negligible switching losses. These devices are designed for use in applications requiring fast switching and low capacitance characteristics.
Publicly confirmed substitute part numbers for this specific variant are not available in the provided source material.
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