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The BAT54SW_R1_00001 is a dual series Schottky barrier diode manufactured by Panjit International Inc. in the SOT-323-3 surface-mount package. It features a silicon construction with a maximum average forward current of 100 mA and a peak forward surge current of 600 mA. The device supports a repetitive reverse voltage of 30 V and maintains a low forward voltage of 600 mV. Reverse leakage current is limited to 2 uA, while power dissipation reaches 200 mW. Operating temperatures range from -55 C to +125 C.
Verify the specific suffix R1_00001 against official Panjit documentation to confirm packaging and tape-and-reel specifications. Ensure compatibility with SOT-323-3 footprint requirements during PCB layout. Cross-reference electrical limits with system operating conditions to prevent thermal overstress. Confirm RoHS compliance status through manufacturer datasheets before final procurement approval.
Select this component when space-constrained designs require dual Schottky diodes in a single small outline package. The low forward voltage drop makes it suitable for low-voltage power management applications. Verify that the 30 V reverse voltage rating exceeds the maximum circuit voltage with adequate margin. Consider the 100 mA continuous current limit for load requirements.
This part belongs to Panjit's SSM-02TACS series of surface mount Schottky diodes. It utilizes standard silicon technology optimized for low capacitance and fast recovery characteristics. The SOT-323-3 package provides a compact solution for portable electronics and consumer devices where board space is limited.
BAT54W_R1_00001 offers similar electrical characteristics but differs in internal configuration as a single diode rather than dual series.