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The BAT6404WE6327HTSA1 is a silicon Schottky diode manufactured by Infineon Technologies, housed in an SOT-323-3 surface-mount package. It features a dual series configuration with a maximum repetitive reverse voltage of 40 V and a forward current rating of 250 mA. The device exhibits a typical forward voltage of 570 mV and a low reverse current of 2 uA. It supports a forward surge current of 800 mA and operates within a temperature range of -55 C to +150 C. The component is qualified under AEC-Q100 standards for automotive applications.
Verify the specific suffix against official Infineon documentation to confirm packaging and tape-and-reel specifications. Ensure the part number matches the required SOT-323-3 footprint and pinout configuration for your PCB layout. Confirm AEC-Q100 compliance requirements if deploying in automotive environments. Cross-reference datasheet revisions to ensure parameter consistency with your design specifications.
Select this component when a compact dual series Schottky diode is required for low-voltage rectification. The SOT-323-3 package offers space efficiency for dense layouts. Consider the 40 V reverse voltage rating and 250 mA forward current limits during circuit design. The AEC-Q100 qualification makes it suitable for automotive applications requiring high reliability and wide operating temperature ranges.
This component belongs to the BAT64 series of Schottky diodes from Infineon Technologies. The series is designed for general-purpose switching and RF applications. The WE6327HTSA1 suffix indicates specific packaging and manufacturing lot details. The device utilizes silicon technology to achieve fast switching speeds and low power loss.
Consult official Infineon substitution guides for verified alternatives. Generic equivalents may not match the AEC-Q100 qualification or exact electrical parameters. Verify pin compatibility and thermal performance before replacing.