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The BAT6404WH6327XTSA1 is a silicon Schottky diode manufactured by Infineon Technologies, housed in an SOT-323-3 surface-mount package. It features a dual series configuration with a maximum repetitive reverse voltage of 40 V and a forward current rating of 250 mA. The device exhibits a typical forward voltage of 570 mV and a low reverse current of 2 uA. It supports a peak forward surge current of 800 mA and operates within a temperature range of -55 C to +150 C. With a power dissipation of 250 mW and AEC-Q100 qualification, it is designed for reliable performance in automotive and general electronic applications.
Verify the complete part number including the suffix H6327XTSA1 to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status through official Infineon documentation prior to integration. Cross-reference the datasheet revision date to ensure alignment with current manufacturing standards and material declarations.
Select this component when a dual series Schottky diode is required in an SOT-323-3 footprint. Ensure the 40 V reverse voltage rating meets the circuit's peak inverse voltage requirements. Verify that the 250 mA continuous forward current capacity is sufficient for the load. Consider the AEC-Q100 qualification if the application demands automotive-grade reliability standards.
This component belongs to the BAT64 series of Schottky diodes from Infineon Technologies. The series is characterized by small signal switching capabilities and low leakage currents. The specific model integrates two diodes in a single compact package, optimizing board space while maintaining high-speed switching performance typical of silicon Schottky technology.
Consult official Infineon substitution guides for verified alternatives. Do not assume pin-compatible substitutes without verifying electrical parameters such as forward voltage and reverse leakage current against the original specification.