RF Diode BAT68E6327HTSA1 product image

BAT68E6327HTSA1

$0.20
  • Description:DIODE SCHOTTKY 8V 150MW SOT23-3
  • Series:-

SKU:a7108c57af1d Category: Brand:

  
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BAT68E6327HTSA1 is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE SCHOTTKY 8V 150MW SOT23-3. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAT68E6327HTSA1

  • Description:DIODE SCHOTTKY 8V 150MW SOT23-3
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Type:Schottky - Single
  • Voltage - Peak Reverse (Max):8V
  • Current - Max:130 mA
  • Capacitance @ Vr, F:1pF @ 0V, 1MHz
  • Resistance @ If, F:10Ohm @ 5mA, 10kHz
  • Power Dissipation (Max):150 mW
  • Operating Temperature:150°C (TJ)
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:PG-SOT23
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for BAT68E6327HTSA1

BAT68E6327HTSA1

RF Diode Overview

The BAT68E6327HTSA1 is a silicon Schottky diode manufactured by Infineon Technologies, designed for very high to ultra-high frequency applications. It features a single-element configuration housed in an R-PDSO-G3 (SOT-23) surface-mount package. Key electrical specifications include a maximum repetitive peak reverse voltage of 8V and a forward current rating of 130mA. The device exhibits a low maximum diode capacitance of 1 pF, making it suitable for mixer diode functions. It operates within a temperature range up to 150°C and complies with RoHS standards.

RF Diode Feature Summary

  • Utilizes silicon Schottky technology for efficient rectification and mixing at high frequencies.
  • Features minimal diode capacitance to support signal integrity in VHF and UHF bands.
  • Integrated into a compact SOT-23 surface-mount package for automated assembly.

RF Diode Applications

  • Mixer diode circuits in radio frequency systems
  • Signal processing in very high frequency to ultra high frequency ranges
  • High-speed switching applications requiring low capacitance

RF Diode Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm package type and tape/reel specifications. Confirm RoHS compliance status through the manufacturer's certificate of conformity. Ensure the component meets AEC-Q101 requirements if automotive qualification is necessary for the target application environment.

RF Diode Selection Notes

Select this component when a low-capacitance Schottky barrier diode is required for RF mixing or detection. The SOT-23 package suits space-constrained designs. Compare the 8V reverse voltage limit against circuit peak voltages to prevent breakdown. Verify thermal management capabilities given the 150°C maximum junction temperature rating.

RF Diode Part Context

This part belongs to the BAT68 series of Schottky diodes from Infineon Technologies. The series is characterized by low forward voltage drop and fast switching speeds. The E6327HTSA1 suffix indicates specific packaging and handling attributes defined by the manufacturer for surface-mount production lines.

RF Diode Replacement Considerations

Consult official Infineon substitution guides for direct equivalents. Generic Schottky diodes may not match the specific 1 pF capacitance or 8V rating required for precise RF mixer performance. Verify pinout compatibility before substituting with other SOT-23 packaged diodes.

BAT68E6327HTSA1BAT68E6327HTSA1
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