SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
BAT85S-TAP is listed in the Single Diodes range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE SCHOTTKY 30V 200MA DO204AH. Review the specifications below when checking this part for your BOM.
The BAT85S-TAP is a small signal Schottky diode manufactured by Vishay Semiconductors. It features an integrated protection ring against static discharge and operates in a DO-35 (DO-204AH) case. Key electrical parameters include a maximum reverse voltage of 30 V, a forward continuous current of 200 mA, and a peak forward surge current of 5 A. The device exhibits very low forward voltage characteristics, with typical values ranging from 240 mV at 0.1 mA to 800 mV at 100 mA. Reverse leakage current is specified at 2 μA maximum at 25 V. Thermal resistance junction-to-ambient air is 350 K/W.
Verify the specific ordering code suffix to confirm packaging configuration. The TAP designation indicates availability in ammopack format. Ensure the component matches the required DO-35 package dimensions and cathode band color identification for proper integration into the target circuit design.
Select this component when low forward voltage drop is critical for circuit efficiency. The integrated static discharge protection ring enhances reliability in sensitive environments. Verify that the 30 V reverse voltage rating and 200 mA continuous current limits align with the operational requirements of the intended application.
This part belongs to the BAT85 series of small signal Schottky diodes produced by Vishay General Semiconductor - Diodes Division. The series is characterized by planar technology and hermetic sealing. The BAT85S variant specifically denotes the single diode configuration within the DO-35 package family.
BAT85S-TR serves as an alternative packaging option for the same semiconductor die and electrical specifications.
The integrated protection ring provides stress protection against static discharge.
The typical reverse recovery time is 5 ns under specified test conditions.
Explore related parts through Rectifiers, Diodes, Discrete Semiconductor Products, all product categories.