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The BAV 99T E6433 is a dual common-anode silicon switching diode manufactured by Infineon Technologies. It integrates two independent diodes within a single SOT-23-3 surface-mount package, designed for high-speed signal processing and logic applications. The component operates with a maximum repetitive peak reverse voltage of 70 V and supports a continuous forward current of 225 mA per diode. It features a low forward voltage drop of approximately 1.25 V at rated current and a fast reverse recovery time of 4 ns. The device is rated for junction temperatures up to 150 °C and complies with RoHS standards.
Verify the specific suffix 'E6433' against official Infineon documentation to confirm tape-and-reel packaging specifications. Confirm that the part number matches the exact electrical parameters required for your design, as variations exist within the BAV 99 family. Ensure compliance with current environmental directives before finalizing procurement.
Select this component when space constraints require dual diode functionality in a standard SOT-23-3 package. It is suitable for applications demanding fast switching speeds and low capacitance. Compare its forward voltage and recovery time against alternatives if circuit efficiency or signal integrity is critical.
This component belongs to the BAV 99 series of dual switching diodes from Infineon. These devices are widely used in consumer electronics and industrial control systems where reliable, fast switching is required. The E6433 suffix typically denotes specific packaging and ordering details defined by the manufacturer.
BAV 99HT1G (Onsemi), BAS46 (Nexperia). Verify pinout compatibility and electrical ratings match the original design requirements.