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The BAV116W-7-G is a surface mount low leakage diode manufactured by Diodes Incorporated. It features a peak repetitive reverse voltage of 130 V and a forward continuous current rating of 215 mA. The device dissipates up to 250 mW of power with a thermal resistance of 500 °C/W. Electrical characteristics include a maximum reverse recovery time of 3.0 µs, a total capacitance of 2.4 pF, and a leakage current of 5.0 nA at 75 V. Operating temperatures range from -65°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm packaging details. The datasheet lists BAV116W-7-F as the standard tape and reel variant. Ensure compliance requirements match project specifications regarding RoHS and lead-free standards before finalizing procurement orders.
Select this component when high reverse blocking capability combined with minimal leakage is required. The SOD-123 case provides a compact footprint for space-constrained designs. Evaluate thermal derating curves if operating near maximum temperature limits to ensure reliable junction-to-ambient heat dissipation.
This part belongs to the BAV116W series of surface mount low leakage diodes produced by Diodes Incorporated. The series utilizes silicon junction technology optimized for small signal switching. The product line emphasizes environmental compliance through halogen-free and antimony-free manufacturing processes.
BAV116W-7-F
The maximum non-repetitive peak forward surge current is 4.0 A at a pulse duration of 1.0 µs.
Polarity is indicated by a cathode band printed on the surface of the device.