SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BAV17-TR is a silicon epitaxial planar switching diode from Vishay Semiconductors, designed for high-voltage applications. It features a maximum repetitive peak reverse voltage of 25 V and a continuous forward current rating of 250 mA. The device exhibits a low reverse recovery time of 50 ns and minimal capacitance of 1.5 pF at 1 MHz. Packaged in the DO-35 axial leaded format, it supports an operating temperature range from -55 °C to +175 °C with a junction temperature limit of 175 °C.
Verify the specific ordering code suffix against official documentation to confirm packaging options such as tape and reel or ammopack configurations. Ensure that the component selection aligns with the required voltage ratings and thermal management specifications for the intended application environment.
Select this component when a small-signal diode requires a 25 V reverse voltage rating combined with rapid switching speeds. Consider its low capacitance characteristics for high-frequency signal integrity. Evaluate the thermal resistance and power dissipation limits to ensure reliable operation within the specified temperature ranges.
This part belongs to the BAV17 through BAV21 series of small signal switching diodes manufactured by Vishay Semiconductors. The series differentiates components primarily by their maximum repetitive peak reverse voltage ratings, ranging from 25 V to 250 V, while sharing similar structural and electrical characteristics.
Compatible substitutes include other single silicon switching diodes with matching DO-35 packages and comparable voltage and current ratings. Verify that alternative parts meet the same reverse recovery time and capacitance requirements for circuit compatibility.