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The Nexperia BAV170-QR is an epitaxial, medium-speed switching double diode in a small SOT23 plastic surface-mounted device package. The internal diodes are configured in a common cathode arrangement. It features low leakage current with a typical value of 3 nA at 75 V reverse voltage and a maximum repetitive peak reverse voltage of 85 V. The component supports a maximum repetitive peak forward current of 500 mA and has a typical switching time of 0.8 µs. It is qualified according to AEC-Q101 standards for automotive applications.
Verify the specific ordering suffix 'R' against the official Nexperia datasheet to confirm reel packaging specifications. Ensure the requested part number matches the exact marking code JX% for production verification. Confirm that the AEC-Q101 qualification status aligns with your specific automotive application requirements before finalizing procurement.
Select this component when designing surface-mounted circuits requiring low leakage current characteristics. The common cathode double diode structure is suitable for general-purpose switching tasks where medium speed is adequate. Consider the SOT23 package constraints for thermal management and board space limitations during the design phase.
This component belongs to Nexperia's range of low-leakage double diodes designed for surface-mount technology. It utilizes an epitaxial construction within a standard SOT23 plastic package. The product line targets applications demanding reliable switching performance with minimal reverse current flow in compact electronic assemblies.
BAV199-Q
The two diodes inside the BAV170-Q package are connected in a common cathode configuration.
Yes, the BAV170-Q is qualified according to the AEC-Q101 standard and is recommended for use in automotive applications.
The maximum repetitive peak reverse voltage (VRRM) for the BAV170-Q is 85 V at a junction temperature of 25 °C.