BAV199E6433HTMA1

BAV199E6433HTMA1

$0.09
  • Description:DIODE ARRAY GP 80V 200MA PGSOT23
  • Series:-

SKU:aaa7d8b381e5 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE ARRAY GP 80V 200MA PGSOT23
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Configuration:1 Pair Series Connection
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):80 V
  • Current - Average Rectified (Io) (per Diode):200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):1.5 µs
  • Current - Reverse Leakage @ Vr:5 nA @ 75 V
  • Operating Temperature - Junction:150°C (Max)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:PG-SOT23
  • Grade:-
  • Qualification:-

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BAV199E6433HTMA1

Overview

The BAV199E6433HTMA1 is a silicon low leakage diode from Infineon Technologies, housed in an SOT-23 package with a series pair configuration. It features a peak reverse voltage of 85 V and a forward current rating of 200 mA. The device supports non-repetitive peak surge currents up to 4.5 A at 1 µs. Electrical characteristics include a maximum reverse current of 80 nA at 75 V and a typical reverse recovery time of 0.6 µs. Total power dissipation is rated at 330 mW, with a junction temperature range extending to 150 °C.

Feature Summary

  • Series pair configuration for dual-diode applications
  • Low-leakage performance suitable for sensitive circuits
  • Qualified according to AEC-Q101 automotive standards

Applications

  • Low-leakage signal processing
  • Medium speed switching circuits
  • Automotive electronics systems

Procurement Notes

Verify the component status before procurement as this specific part number may be subject to end-of-life or obsolescence notices. Confirm that the SOT-23 package and E6433 ordering suffix align with your manufacturing requirements. Ensure compliance with RoHS directives and check for any special requests regarding Pb-containing packages if necessary.

Selection Notes

Select this component when low reverse leakage current is critical for circuit performance. The series pair configuration allows for compact designs requiring two diodes in a single package. Verify that the 85 V peak reverse voltage and 200 mA forward current ratings meet the operational demands of the target application environment.

Part Context

This component belongs to the BAV199 series of silicon low leakage diodes manufactured by Infineon Technologies. The series is designed for general-purpose switching and low-leakage applications. The E6433 suffix indicates specific packaging and marking details consistent with Infineon's standard product coding system for surface-mount devices.

Replacement Considerations

Consult official Infineon documentation for verified substitute part numbers within the BAV199 series or equivalent low-leakage diodes. Ensure any replacement maintains the SOT-23 package and meets the same electrical specifications for reverse voltage and leakage current.

BAV199E6433HTMA1BAV199E6433HTMA1
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