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The BAV199E6433HTMA1 is a silicon low leakage diode from Infineon Technologies, housed in an SOT-23 package with a series pair configuration. It features a peak reverse voltage of 85 V and a forward current rating of 200 mA. The device supports non-repetitive peak surge currents up to 4.5 A at 1 µs. Electrical characteristics include a maximum reverse current of 80 nA at 75 V and a typical reverse recovery time of 0.6 µs. Total power dissipation is rated at 330 mW, with a junction temperature range extending to 150 °C.
Verify the component status before procurement as this specific part number may be subject to end-of-life or obsolescence notices. Confirm that the SOT-23 package and E6433 ordering suffix align with your manufacturing requirements. Ensure compliance with RoHS directives and check for any special requests regarding Pb-containing packages if necessary.
Select this component when low reverse leakage current is critical for circuit performance. The series pair configuration allows for compact designs requiring two diodes in a single package. Verify that the 85 V peak reverse voltage and 200 mA forward current ratings meet the operational demands of the target application environment.
This component belongs to the BAV199 series of silicon low leakage diodes manufactured by Infineon Technologies. The series is designed for general-purpose switching and low-leakage applications. The E6433 suffix indicates specific packaging and marking details consistent with Infineon's standard product coding system for surface-mount devices.
Consult official Infineon documentation for verified substitute part numbers within the BAV199 series or equivalent low-leakage diodes. Ensure any replacement maintains the SOT-23 package and meets the same electrical specifications for reverse voltage and leakage current.