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The Vishay BAV19W-HE3_A-08 is a silicon epitaxial planar small signal switching diode housed in an SOD-123 surface-mount package. It features a continuous reverse voltage of 100 V and a repetitive peak reverse voltage of 120 V. The device supports a DC forward current of 300 mA and a surge forward current of 1 A. Electrical characteristics include a maximum forward voltage of 1.25 V at 200 mA, a leakage current of 100 nA at 100 V, and a reverse recovery time of 50 ns. It operates within a temperature range of -55 °C to +150 °C.
Verify the specific ordering suffix HE3_A-08 to confirm AEC-Q101 qualification status, as commercial grades lack this certification. Ensure the procurement documentation explicitly references document number 86372. Confirm that the component matches the SOD-123 mechanical dimensions and marking code AT. Validate compliance with RoHS directives and material categorization requirements before finalizing orders.
Select this component when high-voltage isolation is required alongside fast switching capabilities. The SOD-123 package provides a compact footprint suitable for space-constrained designs. Verify that the 100 V continuous reverse voltage rating aligns with the circuit's maximum operating conditions. Consider the thermal resistance values if power dissipation limits are critical to the application design.
This part belongs to the BAV19W/BAV20W/BAV21W series of high-voltage small signal switching diodes manufactured by Vishay Semiconductors. The series utilizes silicon epitaxial planar technology. The BAV19W variant specifically targets applications requiring a 100 V reverse voltage rating, distinguishing it from the higher-rated BAV20W and BAV21W models within the same family.
BAV19W-E3-08
The BAV19W-HE3_A-08 is AEC-Q101 qualified for automotive applications, whereas the BAV19W-E3-08 is a commercial grade component without this specific automotive qualification.
The maximum junction temperature (Tj) for the BAV19W-HE3_A-08 is 150 °C.