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The BAV19WHE3-TP is a silicon epitaxial planar small signal diode manufactured by Micro Commercial Components (MCC). It operates within a junction temperature range of -55°C to +150°C and features a thermal resistance of 305°C/W. The device is housed in an SOD-123 package with a maximum repetitive peak reverse voltage of 100V, a continuous forward current of 200mA, and a power dissipation rating of 410mW. Electrical characteristics include a typical reverse recovery time of 50ns, a maximum forward voltage of 1.25V at 200mA, and a total capacitance of 1.5pF at 0V bias.
Verify the component authenticity through authorized MCC distributors or direct manufacturer channels to ensure full traceability and compliance with quality standards. Confirm that the ordering suffix indicates RoHS compliance and lead-free finish. Check specific packaging configurations such as tape and reel quantities against project requirements before finalizing procurement orders.
Select this component when a 100V reverse voltage rating and 200mA average rectified current are required in a compact SMD form factor. Consider the 50ns reverse recovery time for high-speed switching needs. Ensure the operating environment stays within the specified -55°C to +150°C junction temperature limits and verify compatibility with the SOD-123 footprint during PCB layout design.
This part belongs to the BAV19WHE3 through BAV21WHE3 series of 410mW small signal diodes. These devices share identical physical dimensions and mounting styles but differ in their peak reverse voltage ratings, which range from 100V to 250V across the series family. All variants utilize silicon epitaxial planar technology and are designed for general-purpose applications requiring reliable performance in space-constrained environments.
BAV19W-TP
The maximum repetitive peak reverse voltage is 100V.
Yes, the device is AEC-Q101 qualified.
The typical reverse recovery time is 50ns under specified test conditions.