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The BAV202-GS08 is a high-voltage silicon epitaxial planar switching diode manufactured by Vishay Semiconductors. It features a maximum repetitive peak reverse voltage of 200 V and a continuous forward current rating of 250 mA. The device operates within a junction temperature range of -65 °C to +175 °C and dissipates up to 500 mW of power. Packaged in the QuadroMELF (SOD-80) surface-mount format, it exhibits a typical reverse recovery time of 50 ns and a diode capacitance of 1.5 pF at 0 V bias.
Verify the specific GS08 packaging code corresponds to the required 2,500-unit reel quantity before ordering. Confirm that the application environment remains within the specified 175 °C junction temperature limit. Ensure the PCB footprint matches the SOD-80 mechanical dimensions provided in the datasheet. Validate compliance requirements against the material categorization documentation.
Select this component when a single-diode configuration requires a 200 V blocking voltage and 250 mA current handling. Consider the low 1.5 pF capacitance for high-frequency signal integrity. Evaluate the 500 mW power dissipation against the available thermal resistance on the printed circuit board. Compare the 50 ns recovery speed against system timing requirements.
This part belongs to the BAV20x series of small-signal switching diodes from Vishay Semiconductors. The series includes variants with different reverse voltage ratings: BAV200 (60 V), BAV201 (120 V), and BAV203 (250 V). All members share identical physical packages and electrical characteristics except for their breakdown voltage limits.
BAV202-GS18 serves as an alternative packaging option within the same product family.