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The BAV20W-G is a silicon switching diode manufactured by Taiwan Semiconductor Corporation. It features a single configuration housed in an SOD-123 surface-mount package. Key electrical specifications include a peak reverse voltage of 150 V, a maximum forward current of 200 mA, and a surge current rating of 4 A. The device exhibits a typical reverse recovery time of 50 ns and a maximum reverse leakage current of 100 nA at rated voltage. It operates within a junction temperature range of -65°C to +150°C.
Verify the specific suffix 'G' against the manufacturer's official datasheet to confirm RoHS compliance status and terminal finish specifications. Ensure the ordering quantity aligns with the standard reel packaging requirements defined by Taiwan Semiconductor. Cross-reference the Mouser part number 821-BAV20W-G RHG for accurate sourcing details.
Select this component for designs requiring compact surface-mount solutions with fast switching characteristics. The SOD-123 package offers space efficiency compared to through-hole alternatives. Consider the 150 V reverse voltage rating when designing for circuits with moderate voltage spikes. Evaluate thermal management needs based on the 200 mA continuous forward current limit.
This component belongs to the BAV series of small-signal switching diodes produced by Taiwan Semiconductor. These devices are engineered for general-purpose high-speed switching applications. The series is widely utilized in digital logic circuits and signal processing modules where rapid transition times and low capacitance are critical performance factors.
Publicly confirmed substitute part numbers for BAV20W-G were not identified in the provided source material.