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The BAV20W-G3-18 is a silicon epitaxial planar switching diode from Vishay Semiconductors, housed in an SOD-123 surface-mount package. It features a continuous reverse voltage of 150 V and a repetitive peak reverse voltage of 200 V. The device supports a DC forward current of 250 mA and a surge forward current of 1 A. Electrical characteristics include a maximum reverse leakage current of 100 nA at 150 V, a typical forward voltage of 1.25 V at 200 mA, and a reverse recovery time of 50 ns.
Verify the specific ordering suffix to confirm packaging configuration, as the -18 designation indicates tape and reel options. Confirm RoHS compliance status and material categorization details directly from the manufacturer's documentation before finalizing procurement plans. Ensure the component meets all required environmental operating temperatures for the intended application environment.
Select this component when a single diode with a 150 V continuous reverse voltage rating is required in a compact SMD form factor. Consider the 50 ns reverse recovery time for high-frequency switching needs. Evaluate the thermal resistance and power dissipation limits relative to the ambient temperature conditions of the target circuit design.
This part belongs to the BAV20W-G series of small signal switching diodes manufactured by Vishay General Semiconductor - Diodes Division. The series includes variants with different reverse voltage ratings, such as the BAV19W-G and BAV21W-G, all sharing similar physical dimensions and electrical characteristics except for their voltage specifications.
BAV20W-G3-08