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The BAV20WS-HE3-08 is a silicon epitaxial planar switching diode manufactured by Vishay General Semiconductor. It is housed in the SOD-323 surface-mount package and is qualified to AEC-Q101 standards for automotive applications. The device features a maximum DC reverse voltage of 150 V and an average rectified forward current of 250 mA. Key electrical characteristics include a maximum reverse leakage current of 100 nA at 150 V, a typical junction capacitance of 1.5 pF at 0 V, and a fast reverse recovery time of 50 ns.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific suffix HE3-08 matches the required RoHS-compliant lead-free packaging configuration. Ensure the ordering quantity aligns with the standard factory reel size to avoid partial reel handling issues. Request original datasheets and material compliance certificates prior to final procurement decisions.
Select this component when high-speed switching performance is required in a compact surface-mount form factor. The AEC-Q101 qualification makes it suitable for automotive electronics where reliability under varying thermal conditions is critical. Compare its 50 ns reverse recovery time against slower general-purpose diodes if circuit speed is a primary design constraint.
This part belongs to the BAVxxWS series of small signal switching diodes from Vishay. These devices utilize silicon epitaxial planar technology and are designed for general-purpose applications requiring fast switching speeds. The WS designation indicates the SOD-323 package variant, which offers space-saving benefits compared to traditional axial leads.
Yes, the component is explicitly qualified to AEC-Q101 standards, making it suitable for automotive electronic systems.
The maximum reverse recovery time (trr) is specified as 50 ns.