BAV21-TR

Overview

The BAV21-TR is a silicon epitaxial planar switching diode manufactured by Vishay General Semiconductor - Diodes Division. It features a DO-35 (DO-204AH) leaded glass package with a black cathode band. The device supports a repetitive peak reverse voltage of 250 V and a continuous forward current of 250 mA. Key electrical characteristics include a maximum reverse recovery time of 50 ns, a typical forward voltage of 1 V at 100 mA, and a diode capacitance of 1.5 pF at 0 V and 1 MHz. The component operates within a temperature range of -55 °C to +175 °C.

Feature Summary

• Hermetically sealed leaded glass SOD27 (DO-35) package
• Fast switching speed with a maximum reverse recovery time of 50 ns
• High voltage capability with a repetitive peak reverse voltage up to 250 V

Applications

• General purposes in industrial equipment
• Oscilloscopes
• Digital voltmeters
• Video output stages in colour television

Procurement Notes

Verify the specific ordering code suffix against the manufacturer's documentation to confirm packaging options. The datasheet indicates availability in tape and reel or ammopack formats. Ensure that the selected variant matches the required voltage rating and package type for your design. Cross-reference the document revision date to ensure you are using the most current specifications. Confirm compliance requirements such as RoHS status if applicable to your project constraints.

Selection Notes

Select this component when high-voltage switching capabilities are required in a standard axial leaded package. The BAV21 variant provides a 250 V reverse voltage rating, distinguishing it from lower-rated siblings like the BAV20. Consider the thermal resistance and power dissipation limits during circuit design. Verify that the 50 ns switching speed meets the timing requirements of the target application. Ensure the operating temperature range aligns with the environmental conditions of the final assembly.

Part Context

The BAV21-TR belongs to the BAV17 through BAV21 series of small signal switching diodes. These devices are fabricated using silicon epitaxial planar technology. The series shares similar mechanical and electrical structures but varies primarily in their breakdown voltage ratings. The BAV21 represents the highest voltage option in this specific family, designed for applications requiring robust reverse blocking capabilities.

Replacement Considerations

BAV20-TR