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The onsemi BAV21 is a small signal switching diode fabricated in planar technology and encapsulated in a hermetically sealed leaded glass DO-35 package. It features a maximum repetitive reverse voltage of 250 V, an average rectified forward current of 200 mA, and a non-repetitive peak forward surge current of 4.0 A for a 1 microsecond pulse width. The device exhibits a maximum reverse recovery time of 50 ns and a total capacitance of 5.0 pF at 0 V reverse bias and 1.0 MHz frequency. Power dissipation is rated at 500 mW with a thermal resistance of 300 °C/W from junction to ambient.
Verify the specific manufacturer origin, as the BAV21 part number is produced by multiple vendors including Fairchild Semiconductor (now onsemi), Nexperia, and others. Confirm that the component matches the required DO-35 package style and lead configuration. Ensure the datasheet revision aligns with the intended design specifications before finalizing procurement orders.
Select this component when a high-voltage small signal diode with fast switching characteristics is required. The 250 V rating distinguishes it from lower voltage variants like the BAV19 or BAV20. Consider the DO-35 through-hole package constraints versus surface mount alternatives if board space is limited.
The BAV21 belongs to a family of general-purpose silicon switching diodes designed for industrial equipment applications. It shares similar electrical characteristics with the BAV19 and BAV20 but offers a higher breakdown voltage. These components are widely used in signal processing circuits where low capacitance and rapid recovery are essential.
BAV20
The maximum repetitive reverse voltage (VRRM) for the BAV21 is 250 V.
The typical reverse recovery time (trr) is 50 ns under specified test conditions.