BAV21W-E3-08

BAV21W-E3-08

$0.14
  • Description:DIODE STANDARD 200V 250MA SOD123
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:6c7d4730b4b8 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:DIODE STANDARD 200V 250MA SOD123
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):200 V
  • Current - Average Rectified (Io):250mA
  • Voltage - Forward (Vf) (Max) @ If:1 V @ 100 mA
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):50 ns
  • Current - Reverse Leakage @ Vr:100 nA @ 150 V
  • Capacitance @ Vr, F:1.5pF @ 0V, 1MHz
  • Mounting Type:Surface Mount
  • Package / Case:SOD-123
  • Supplier Device Package:SOD-123
  • Operating Temperature - Junction:175°C (Max)
  • Grade:-
  • Qualification:-

Download product information

BAV21W-E3-08

Overview

The BAV21W-E3-08 is a high-voltage silicon epitaxial planar switching diode from Vishay General Semiconductor, housed in an SOD-123 surface-mount package. It features a maximum continuous reverse voltage of 200 V and a repetitive peak reverse voltage of 250 V. The device supports a DC forward current of 250 mA and an average rectified current of 200 mA. Electrical characteristics include a maximum forward voltage of 1.25 V at 200 mA, a leakage current of 100 nA at 200 V, and a reverse recovery time of 50 ns. Thermal resistance junction-to-ambient is 375 °C/W, with an operating temperature range of -55 °C to +150 °C.

Feature Summary

  • High-voltage silicon epitaxial planar construction for general-purpose applications
  • RoHS-compliant commercial grade design without halogenated substances
  • Optimized for fast switching with low dynamic forward resistance

Applications

  • General-purpose signal switching circuits
  • High-voltage protection stages
  • Clamping and clamping applications

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration before procurement. The '-08' designation indicates tape and reel packaging on a 7-inch reel with 3000 units per box. Confirm that the component meets the RoHS compliance requirements for your assembly process. Ensure the selected variant aligns with the intended thermal management strategy given the specified power dissipation limits.

Selection Notes

Select this component when a single high-voltage switching diode is required in a compact SOD-123 footprint. The BAV21W offers a higher voltage rating compared to the BAV19W and BAV20W variants within the same series. Consider the thermal resistance and ambient temperature conditions to ensure the power dissipation limits are not exceeded during operation.

Part Context

This part belongs to the BAV19W/BAV20W/BAV21W family of small-signal switching diodes manufactured by Vishay Semiconductors. The family shares identical mechanical dimensions and electrical characteristics except for the reverse voltage ratings. The BAV21W specifically provides the highest voltage capability within this group, making it suitable for applications requiring up to 250 V peak reverse voltage.

Replacement Considerations

Direct substitutes within the same Vishay series include BAV19W-E3-08 (100 V) and BAV20W-E3-08 (150 V), provided lower voltage ratings are acceptable. Cross-manufacturer replacements must match the SOD-123 package, 200 mA current rating, and 200 V minimum reverse voltage specifications.

BAV21W-E3-08BAV21W-E3-08
$0.14
Buy Now