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The BAV21W-G3-08 is a high-voltage silicon epitaxial planar switching diode from Vishay Semiconductors, housed in an SOD-123 surface-mount package. It features a maximum continuous reverse voltage of 200 V and a repetitive peak reverse voltage of 250 V. The device supports a DC forward current of 250 mA and a rectified average current of 200 mA. Electrical characteristics include a maximum leakage current of 100 nA at 200 V, a typical reverse recovery time of 50 ns, and a diode capacitance of 1.5 pF at 0 V and 1 MHz.
Verify the specific suffix G3-08 against official documentation to confirm compliance with RoHS directives and material categorization standards. Ensure that the ordering code matches the required tape and reel packaging configuration for automated assembly processes. Cross-reference the manufacturer's latest datasheet revision to validate all electrical parameters before finalizing procurement specifications.
Select this component when a single diode requires a 200 V reverse voltage rating combined with low capacitance for high-speed operation. The SOD-123 package offers a compact footprint ideal for space-constrained designs. Consider the thermal resistance and power dissipation limits relative to the expected ambient temperature and forward current load during steady-state conditions.
This part belongs to the BAVxxW-G series of small-signal switching diodes manufactured by Vishay Semiconductors. The series includes variants with different reverse voltage ratings, such as the BAV19W-G and BAV20W-G. These components are designed for general-purpose applications requiring reliable performance in standard commercial grade configurations.
BAV21W-G3-18
The maximum repetitive peak reverse voltage (VRRM) is 250 V.
AEC-Q101 qualification is available for this series, but the specific part number must be requested directly from the manufacturer.