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The BAV21W-G RHG is a standard small-signal switching diode manufactured by Taiwan Semiconductor Corporation. It features a peak reverse voltage of 200 V and an average forward current rating of 200 mA. The device exhibits a maximum reverse leakage current of 100 nA at 200 V and a typical forward voltage drop of 1.25 V at 200 mA. Electrical characteristics include a reverse recovery time of 50 ns and a junction capacitance of 5 pF at 0 V bias. The component operates within a junction temperature range of -65°C to +150°C and is housed in the SOD-123 surface-mount package.
Verify the specific ordering suffix against manufacturer documentation to confirm exact packaging configuration, as designations such as RHG may indicate reel or cut-tape formats. Confirm RoHS compliance status through official datasheets prior to integration. Ensure the selected variant matches the required voltage and current ratings for the target application environment.
Select this component when a standard silicon switching diode is required for low-current applications. The SOD-123 package offers a balance between thermal performance and board space efficiency. Verify that the 200 mA continuous current rating meets the circuit's load requirements and that the 200 V reverse voltage provides adequate margin for transient spikes.
This part belongs to the BAV21 series of small-signal switching diodes from Taiwan Semiconductor. The series typically includes variants with different packaging options, such as axial leaded DO-35 or other surface-mount configurations. The BAV21W-G RHG specifically denotes the surface-mount version optimized for automated assembly processes.
Cross-reference with other manufacturers' BAV21 equivalents. Verify pinout compatibility and ensure that substitute components meet or exceed the 200 V reverse voltage and 200 mA forward current specifications.