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The BAV21WS-E3-08 is a single silicon switching diode manufactured by Vishay General Semiconductor. It features a maximum repetitive peak reverse voltage of 200 V and an average forward rectified current of 200 mA. The device exhibits a peak reverse recovery time of 50 ns and a maximum DC reverse leakage current of 100 nA at 200 V. It operates within a junction temperature range of -65°C to +150°C and has a maximum power dissipation of 250 mW. The component is housed in a surface-mount SOD-323 package.
Verify the specific suffix E3-08 against official Vishay documentation to confirm RoHS compliance and tape-and-reel packaging specifications. Ensure the ordering part number matches the required SOD-323 variant, as suffixes may indicate different reel quantities or minor mechanical variations not affecting electrical function. Cross-reference datasheets for exact thermal resistance values if thermal management is critical.
Select this component when a single high-voltage switching diode with fast recovery characteristics is required in a compact footprint. The 200 V rating suits applications exceeding standard low-voltage logic levels. Consider the 200 mA current limit for signal processing rather than power rectification. Verify compatibility with automated assembly processes due to the small SOD-323 package dimensions.
This component belongs to the BAV21 series of high-voltage silicon switching diodes from Vishay. The series is designed for general-purpose switching applications requiring fast response times. The BAV21WS variant specifically utilizes the SOD-323 surface-mount package, offering a smaller profile compared to traditional axial leads while maintaining similar electrical performance characteristics for board-level integration.
BAV21WS-G3-18
The maximum operating junction temperature is 150°C.
Public documentation does not specify AEC-Q101 qualification for this specific part number.