SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BAV23QAZ is a dual common-anode switching diode manufactured by Nexperia USA Inc. It utilizes silicon technology and is housed in a DFN1010D-3 surface-mount package. The device supports a maximum DC collector current of 200 mA and withstands a peak reverse voltage of 75 V. Key electrical parameters include a forward voltage of 1.25 V, a reverse current of 500 nA, and a capacitance of 2 pF at 1 MHz. It operates within a temperature range of -55°C to +150°C and holds AEC-Q101 qualification for automotive reliability.
Verify the specific suffix 'QAZ' against official Nexperia documentation to confirm the DFN1010D-3 package and AEC-Q101 automotive grade status. Ensure compatibility with required thermal management and soldering profiles for this small outline package type before integration into production designs.
Select this component when a compact dual-diode solution is required for high-speed switching or protection tasks. The AEC-Q101 certification makes it suitable for automotive environments where long-term reliability under varying thermal conditions is critical. Compare pinout and package dimensions against existing board layouts to ensure mechanical fit.
This part belongs to Nexperia's portfolio of small-signal switching diodes designed for general-purpose applications. The QAZ suffix indicates a specific automotive-grade variant packaged in a DFN1010D-3 form factor, distinguishing it from standard commercial versions which may use different packaging or lack extended temperature ratings.
Check for direct substitutes such as the BAV23W series if package compatibility allows. Verify that any replacement maintains the same common-anode configuration and meets the required 75 V reverse voltage rating.