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The BAV300-TR is a high-voltage silicon epitaxial planar switching diode from Vishay Semiconductors, housed in a hermetically sealed MicroMELF package. It features a maximum repetitive peak reverse voltage of 60 V and a continuous forward current rating of 250 mA. Key electrical characteristics include a typical forward voltage of 1 V at 100 mA, a reverse recovery time of 50 ns, and a diode capacitance of 1.5 pF at 0 V and 1 MHz. The device supports junction temperatures up to 175 °C.
Verify the specific ordering code suffix against official documentation to confirm packaging options. The datasheet indicates availability in tape and reel formats, such as TR3 for 10K per 13-inch reel or TR for 2.5K per 7-inch reel. Ensure the selected variant matches the required quantity and reel size for your manufacturing process.
Select the BAV300-TR when a 60 V reverse voltage rating is sufficient for the application. This component is suitable for designs requiring a compact, hermetically sealed surface-mount solution that fits standard SMD footprints. Consider the 50 ns reverse recovery time and 1.5 pF capacitance for high-speed signal integrity requirements.
This component belongs to the BAV30x series of small signal switching diodes manufactured by Vishay General Semiconductor - Diodes Division. The series includes variants with different reverse voltage ratings, specifically BAV301 (120 V), BAV302 (200 V), and BAV303 (250 V). All devices in this family share identical electrical data and physical dimensions.
BAV301-TR, BAV302-TR, BAV303-TR
The maximum repetitive peak reverse voltage (VRRM) for the BAV300 is 60 V.
Yes, the MicroMELF package is designed to fit onto SOD-323 and SOT-23 footprints.