BAV301-TR

Overview

The BAV301-TR is a high-voltage silicon epitaxial planar switching diode from the Vishay BAV30x series, packaged in a hermetically sealed MicroMELF case. It features a repetitive peak reverse voltage of 120 V and a maximum forward continuous current of 250 mA. The device exhibits a low differential forward resistance of 5 Ω at 10 mA and a typical reverse recovery time of 50 ns. Junction temperature ranges up to 175 °C with a storage range of -65 °C to +175 °C.

Feature Summary

• Hermetically sealed silicon epitaxial planar construction
• Compact MicroMELF package compatible with SOD-323/SOT-23 footprints
• High breakdown voltage capability for signal isolation

Applications

• General purpose signal switching
• High voltage circuit protection
• Logic level shifting

Procurement Notes

Verify the specific ordering code suffix against official documentation to confirm packaging format. Confirm that the component meets required material categorization standards for compliance. Validate thermal resistance parameters against the target application's board layout requirements before finalizing procurement.

Selection Notes

Select this component when a single high-voltage switching diode is required in a compact surface-mount form factor. Ensure the design accommodates the 120 V reverse voltage rating and verify that the 250 mA forward current limit satisfies the circuit load. Consider the MicroMELF footprint compatibility during PCB layout.

Part Context

This part belongs to the BAV30x family of small-signal switching diodes manufactured by Vishay Semiconductors. The series includes variants with different reverse voltage ratings (BAV300 to BAV303) sharing identical electrical characteristics and physical dimensions. The BAV301 specifically provides a 120 V rating within this standardized lineup.

Replacement Considerations

Datasheet confirms electrical data is identical to BAV100–BAV103 and BAV200–BAV203 series devices.