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The BAV302-TR is a high-voltage silicon epitaxial planar switching diode manufactured by Vishay General Semiconductor - Diodes Division. It features a MicroMELF hermetic sealed package designed for space-saving surface-mount applications. The device supports a repetitive peak reverse voltage of 200 V and a continuous forward current of 250 mA. Key electrical characteristics include a maximum reverse leakage current of 100 nA at 150 V, a typical forward voltage of 1 V at 100 mA, and a reverse recovery time of 50 ns. The component operates within a junction temperature range up to 175 °C.
Verify the specific ordering suffix (e.g., TR or TR3) against the datasheet to confirm reel packaging specifications. Ensure the procurement documentation explicitly references Vishay document number 85545. Confirm that the received components match the MicroMELF package dimensions and cathode band color identification provided in the mechanical data section.
Select this component when a 200 V reverse voltage rating is required alongside a 250 mA forward current capacity. The MicroMELF package offers a hermetic seal suitable for environments requiring robust protection. Consider this part if footprint compatibility with SOD-323 or SOT-23 layouts is necessary while maintaining performance equivalent to the BAV202 standard.
This component belongs to the BAV30x family of small signal switching diodes from Vishay Semiconductors. The family includes variants with different reverse voltage ratings: BAV300 (60 V), BAV301 (120 V), BAV302 (200 V), and BAV303 (250 V). All members share identical electrical data and physical package characteristics as defined in the shared datasheet.
BAV202-TR
The maximum repetitive peak reverse voltage (VRRM) for the BAV302 is 200 V.
Yes, the datasheet states that the MicroMELF package fits onto SOD-323 and SOT-23 footprints.