BAV303-TR

Overview

The BAV303-TR is a high-voltage silicon epitaxial planar switching diode manufactured by Vishay General Semiconductor - Diodes Division. It features a MicroMELF surface-mount package with a maximum repetitive peak reverse voltage of 250 V and a continuous forward current rating of 250 mA. The device exhibits a low reverse recovery time of 50 ns, a typical forward voltage of 1 V at 100 mA, and a junction temperature capability up to 175 °C.

Feature Summary

• Hermetically sealed construction in a compact MicroMELF case for space-saving integration
• High-voltage capability with a 250 V repetitive peak reverse voltage rating
• Fast switching performance characterized by a 50 ns reverse recovery time

Applications

• General-purpose signal switching circuits
• High-voltage rectification applications
• Replacement for devices requiring identical electrical data to the BAV100-BAV103 or BAV200-BAV203 series

Procurement Notes

Verify that the specific ordering code matches the required packaging option, such as TR3 for 10K units per 13-inch reel or TR for 2.5K units per 7-inch reel. Confirm the component status remains active and check for any updates to the datasheet revision history before finalizing procurement specifications.

Selection Notes

Select this component when a high-voltage single diode with fast recovery characteristics is required in a small surface-mount footprint. Ensure the application voltage does not exceed the 250 V RRM limit and that the thermal design accommodates the specified junction temperature range of -65 °C to +175 °C.

Part Context

This part belongs to the BAV30x family of small-signal switching diodes from Vishay Semiconductors. It shares electrical data identity with the BAV100 to BAV103 and BAV200 to BAV203 series, offering a standardized solution for high-voltage switching tasks within the same physical package constraints.

Replacement Considerations

Public confirmed substitute part numbers: BAV303-TR3.