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The BAV303-TR3 is a high-voltage silicon epitaxial planar switching diode manufactured by Vishay General Semiconductor - Diodes Division. It features a MicroMELF surface-mount package with a maximum repetitive peak reverse voltage of 250 V and a continuous forward current rating of 250 mA. The device exhibits a reverse recovery time of 50 ns, a typical forward voltage of 1 V at 100 mA, and a capacitance of 1.5 pF at 0 V and 1 MHz. It supports junction temperatures up to 175 °C.
Verify the specific ordering code against the manufacturer's documentation to ensure correct packaging options. Confirm that the component meets RoHS compliance requirements as defined in the material categorization section. Validate thermal resistance parameters based on the specific PCB copper area and mounting conditions used in your design.
Select this component when a high-voltage switching diode with fast recovery characteristics is required in a small surface-mount footprint. Ensure the application voltage does not exceed the 250 V repetitive peak reverse voltage limit. Consider the thermal resistance values provided for epoxy-glass hard tissue versus copper-clad substrates when calculating heat dissipation.
This part belongs to the BAV300 series of small signal switching diodes designed for high-voltage applications. The series includes variants with different reverse voltage ratings, such as the BAV300 (60 V), BAV301 (120 V), and BAV302 (200 V). All devices share identical electrical data and physical dimensions.
BAV302-TR3
The maximum junction temperature is 175 °C.
The primary difference is the voltage rating; the BAV303 has a maximum repetitive peak reverse voltage of 250 V, while the BAV302 is rated for 200 V.