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The BAV70 RFG is a dual common cathode silicon switching diode manufactured by Taiwan Semiconductor in an SOT-23 surface-mount package. It features a peak repetitive reverse voltage of 70 V and a maximum average forward rectified current of 200 mA. The device exhibits a low forward voltage of 1.25 V at 150 mA and a rapid reverse recovery time of 6 ns. Electrical characteristics include a maximum non-repetitive peak forward surge current of 2 A, a reverse leakage current of 5 µA at rated voltage, and a total capacitance of 1.5 pF. Power dissipation is rated at 225 mW, with an operating junction temperature range from -55 °C to +150 °C.
Verify the specific suffix 'RFG' against the manufacturer's official datasheet to confirm packaging details and compliance status. Ensure the component matches the required electrical ratings for your application. Confirm RoHS compliance and lead times directly with authorized distributors or the manufacturer before placing orders.
Select this component when a dual common cathode switching diode with 70 V reverse voltage and 200 mA forward current is required. Consider the 6 ns recovery time for high-speed applications. Compare power dissipation limits and thermal performance against alternative packages if higher current handling is needed.
This part belongs to the BAV70 family of small-signal switching diodes. These devices are widely used in consumer electronics and industrial equipment for signal processing tasks. The SOT-23 package provides a compact solution for modern printed circuit board designs requiring minimal surface area.
BAV70LT1G (onsemi)
The reverse recovery time is 6 ns.
The maximum average forward rectified current is 200 mA.
No, the BAV70 RFG is specifically designed for surface-mount technology in an SOT-23 package.