BAV70,235

Overview

The BAV70,235 is a dual independent silicon PN junction switching diode manufactured by Nexperia USA Inc. in the SOT-23 (TO-236AB) surface-mount package. It features a reverse voltage of 100 V and an average rectified current of 215 mA. The device exhibits a low forward voltage drop of 1.1 V at 150 mA and a fast reverse recovery time of 4 ns. Maximum power dissipation is 250 mW, with a maximum operating temperature of +150 °C.

Feature Summary

• Dual independent configuration for compact circuit integration
• High-speed switching capability with minimal reverse recovery delay
• Low leakage current characteristics for signal integrity

Applications

• General-purpose high-speed switching circuits
• Signal processing applications requiring fast response
• MOSFET gate drive protection

Procurement Notes

Verify the specific suffix '235' to confirm the reel packaging format and ensure compatibility with automated pick-and-place equipment. Confirm RoHS compliance status through official datasheets prior to final procurement decisions.

Selection Notes

Select this component when a small form factor dual diode solution is required for high-frequency operations. Ensure the 100 V reverse voltage rating exceeds the peak inverse voltage in the target application circuit to prevent breakdown.

Part Context

This part belongs to the Nexperia BAV series of high-speed switching diodes. It serves as a compact alternative to discrete single diodes, reducing board space while maintaining performance standards for general-purpose electronic designs.

Replacement Considerations

BAV70W offers similar electrical characteristics but utilizes the smaller SOT323 (SC-70) package. Verify footprint compatibility before substitution.