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The BAV70HE3-TP is a dual switching diode in an SOT-23 package, rated for 100V repetitive peak reverse voltage and 350mW power dissipation. It features a common cathode configuration with an average forward current of 215mA and a peak forward surge current of 1A. The device exhibits a low reverse recovery time of 4ns and operates within a junction temperature range of -55°C to +150°C.
Verify the manufacturer part number BAV70HE3-TP against official Micro Commercial Components documentation to ensure authenticity. Confirm that the component meets AEC-Q101 requirements if used in automotive applications. Check datasheet specifications for thermal resistance and power derating curves to validate suitability for the intended operating environment.
Select this component when a dual switching diode with high voltage blocking capability is required in a compact surface mount package. The AEC-Q101 qualification makes it suitable for automotive environments. Consider the 4ns reverse recovery time for high-speed switching applications where fast response is critical.
This component belongs to the BAV70 series of dual switching diodes manufactured by Micro Commercial Components. It utilizes a standard SOT-23-3 surface mount package designed for automated assembly processes. The device integrates two independent diodes in a single common cathode configuration.
BAV70M-TP
The maximum power dissipation is 350mW.
Yes, it is AEC-Q101 qualified.
The reverse recovery time is 4ns.