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Product Detailed Parameters
- Description：DIODE ARRAY GP 50V 200MA SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Diode Configuration：1 Pair Common Cathode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：50 V
- Current - Average Rectified (Io) (per Diode)：200mA (DC)
- Voltage - Forward (Vf) (Max) @ If：1 V @ 100 mA
- Speed：Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr)：4 ns
- Current - Reverse Leakage @ Vr：100 nA @ 50 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The BAV74LT3G is a monolithic dual switching diode from onsemi, housed in an SOT-23 (TO-236) surface-mount package. It features two high-speed silicon junction diodes with common cathodes. Key electrical parameters include a maximum reverse voltage of 50 Vdc and a continuous forward current of 200 mAdc per diode. The device exhibits a peak reverse recovery time of 4.0 ns and a diode capacitance of 2.0 pF at 1.0 MHz. Thermal characteristics specify a total device dissipation of 225 mW on an FR-5 board and 300 mW on an alumina substrate.
Feature Summary
- Monolithic dual configuration with common cathode architecture
- High-speed switching capability with minimal reverse recovery time
- Low parasitic capacitance for high-frequency signal integrity
- Compliant with RoHS standards and free from halogens and brominated flame retardants
Applications
- High-speed switching in thick and thin-film circuits
- General-purpose rectification in compact electronic designs
- Signal processing applications requiring fast response times
Procurement Notes
Verify the specific ordering suffix to confirm packaging quantity, as the LT3G designation indicates a tape and reel quantity of 10,000 units. Ensure compatibility with standard SOT-23 footprints during PCB layout. Confirm that the application environment remains within the specified thermal resistance limits to maintain device reliability and prevent excessive junction temperature rise.
Selection Notes
Select this component when a compact dual-diode solution with common cathode topology is required. The low capacitance and fast recovery time make it suitable for high-frequency applications where signal distortion must be minimized. Consider the thermal dissipation requirements relative to the mounting substrate, as power handling differs significantly between FR-5 and alumina boards.
Part Context
This part belongs to the BAV74 series of monolithic dual switching diodes manufactured by onsemi. It utilizes planar technology encapsulated in a small plastic SMD package. The device is designed to replace discrete dual-diode assemblies, saving board space while maintaining high performance in switching and rectification roles.
Replacement Considerations
BAV74LT1G: Identical electrical specifications and pinout; differs only in packaging quantity (3,000 units per tape and reel).
FAQ
What is the pin configuration for the BAV74LT3G?
Pin 1 is Anode, Pin 2 is Anode, and Pin 3 is Cathode.
What is the maximum operating junction temperature?
The maximum junction and storage temperature range is -55°C to +150°C.
