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The Nexperia BAV99/DG/B3,215 is a dual series switching diode array housed in an ultra-small DFN1110D-3 surface-mount package. It features a peak reverse repetitive voltage of 90 V and a maximum continuous forward current of 215 mA per diode. The device exhibits a low peak reverse recovery time of 4 ns and a low junction capacitance of 2 pF. Operating temperatures range from -65°C to +150°C. This component is qualified under the AEC-Q101 standard for automotive applications.
Verify the specific suffix DG/B3 against official Nexperia documentation to confirm the DFN1110D-3 package variant. Ensure the part number matches the 90 V rating specified for this package type rather than the standard 100 V SOT-23 version. Confirm RoHS compliance and lead-free status through the manufacturer's datasheet before procurement.
Select this component when space constraints require an ultra-small footprint compared to traditional SOT-23 packages. The DFN1110D-3 package offers a height of 0.5 mm. Consider the 90 V reverse voltage limit for circuit design. Verify suitability for automatic optical inspection requirements due to visible side pads.
This part belongs to the BAV99 series of dual series high-speed switching diodes manufactured by Nexperia USA Inc. It serves as a compact alternative to larger discrete diode arrangements. The DFN1110D-3 package provides a modern surface-mount solution optimized for automated assembly processes in consumer and automotive electronics.
BAV99,215 (SOT-23 package)
The peak reverse recovery time is 4 ns or less.
Yes, it is qualified according to the AEC-Q101 standard.
The maximum operating junction temperature is 150°C.