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The BAV99E6327 is a silicon small-signal switching diode manufactured by Infineon Technologies. It features a dual configuration housed in an SC-74-6 (SOT-363) surface-mount package. The device supports a peak reverse voltage of 85 V and a maximum forward current of 200 mA, with a surge current rating of 4.5 A. Key electrical characteristics include a fast recovery time of 4 ns, a forward voltage of 1.25 V at 200 mA, and a reverse leakage current of 50 uA. It operates within a temperature range of -65 °C to +150 °C and holds AEC-Q100 qualification.
Verify the specific suffix E6327 against official Infineon documentation to confirm package type and tape-and-reel specifications. Confirm end-of-life status and availability constraints prior to finalizing procurement plans. Ensure compatibility with existing PCB footprints for the SC-74-6 package.
Select this component when a dual-diode solution is required for high-speed switching or clamping in compact designs. The AEC-Q100 qualification makes it suitable for automotive environments. Compare performance metrics such as recovery time and forward voltage against alternatives if specific speed or efficiency thresholds are critical for the application.
This part belongs to the BAV99 series of small-signal switching diodes from Infineon. The series is widely used in consumer electronics and automotive systems for signal processing. The E6327 suffix typically denotes specific packaging and ordering details within Infineon's product lineup.
BAV99UE6327HTSA1: Dual switch diode in SC-74-6 package. BAV99WE6327: Dual switch diode in SOT-323-3 package.