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The BAV99HYT116 is a dual small-signal switching diode manufactured by ROHM Semiconductor in an SOT-23-3 surface-mount package. It features a peak reverse voltage of 100 V and a maximum forward current of 215 mA, with a surge current rating of 4 A. The device exhibits a fast reverse recovery time of 4 ns at 10 mA, maintaining a low forward voltage of 1.25 V at 150 mA. Reverse leakage current is limited to 100 nA, and junction capacitance is capped at 2 pF. Power dissipation reaches 250 mW, supporting operation up to +150°C.
Verify the specific suffix T116 to confirm reel packaging and quantity specifications. Ensure compatibility with RoHS directives if environmental compliance is required. Cross-reference datasheet electrical limits against actual circuit operating conditions to prevent thermal overload. Confirm availability status as manufacturing statuses may change without notice.
Select this component when a dual diode solution is required in a minimal footprint. The 100 V reverse voltage rating provides adequate margin for standard low-voltage digital systems. Consider the 4 ns recovery time for applications exceeding typical general-purpose diode frequencies. Evaluate thermal management requirements given the 250 mW power dissipation limit in the SOT-23 package.
This part belongs to ROHM's BAV99 family of high-speed switching diodes. Variants such as BAV99T116 or BAV99HMT116 share similar electrical characteristics but may differ in packaging, lead finish, or automotive qualification status. The HY designation typically indicates specific internal process optimizations for low leakage compared to standard variants.
BAV99T116: Similar electrical profile; verify pinout and package tolerance alignment. BAV99HMT116: Check for identical reverse voltage and current ratings before substitution. Generic BAV99 equivalents may lack the specific leakage or recovery time guarantees provided by the HY variant.