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The BAV99LM(T is a small-signal switching diode manufactured by Toshiba. It features a series-connected dual-diode configuration within a compact surface-mount package. Key electrical parameters include a maximum reverse voltage of 75 V and an average rectified forward current of 215 mA per diode. The device exhibits a typical forward voltage of 1.25 V at 150 mA and a reverse leakage current of 1 µA at 75 V. It is designed for high-speed switching applications with a junction temperature range of -55°C to 150°C.
Verify the specific ordering suffix, such as (T, against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and check for any end-of-life notices or last-time-buy recommendations directly from Toshiba Semiconductor and Storage before finalizing procurement plans.
Select this component when a compact, series-connected dual-diode solution is required for general-purpose switching. Ensure the 75 V reverse voltage rating meets the circuit's peak inverse voltage requirements. Consider the SOT-23 package dimensions for PCB layout constraints and verify that the 215 mA forward current capacity aligns with the application's load demands.
BAV99 is a widely recognized standard part number for high-speed switching diodes across multiple manufacturers. Toshiba offers variants like BAV99LM(T within its discrete semiconductor portfolio. These devices are commonly used in consumer electronics and industrial equipment where small form factor and reliable switching performance are critical design factors.
Cross-reference with other manufacturers' BAV99 equivalents such as those from Diotec or Nexperia. Verify pinout compatibility and electrical parameter alignment, particularly reverse voltage and forward current ratings, to ensure functional interchangeability without redesigning the surrounding circuitry.