Diode Arrays BAV99QBZ product image

BAV99QBZ

$0.09
  • Description:DIODE ARR GP 90V 300MA DFN1110D3
  • Series:-

SKU:decce7ba6fb0 Category: Brand:

  
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BAV99QBZ is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is DIODE ARR GP 90V 300MA DFN1110D3. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for BAV99QBZ

  • Description:DIODE ARR GP 90V 300MA DFN1110D3
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Configuration:1 Pair Series Connection
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):90 V
  • Current - Average Rectified (Io) (per Diode):300mA
  • Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):4 ns
  • Current - Reverse Leakage @ Vr:500 nA @ 80 V
  • Operating Temperature - Junction:150°C
  • Mounting Type:Surface Mount, Wettable Flank
  • Package / Case:3-XDFN Exposed Pad
  • Supplier Device Package:DFN1110D-3
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for BAV99QBZ

BAV99QBZ

Diode Arrays Overview

The BAV99QBZ is a dual series high-speed switching diode manufactured by Nexperia. It is housed in an ultra-small DFN1110D-3 (SOT8015) surface-mounted device plastic package featuring visible and solderable side pads. Key electrical specifications include a peak reverse voltage of 90 V, a maximum forward current of 300 mA, and a maximum power dissipation of 625 mW. The component exhibits a fast recovery time of 4 ns, low leakage current of 500 uA, and a maximum diode capacitance of 2 pF. It operates within a temperature range of -55 C to +150 C.

Diode Arrays Feature Summary

  • High switching speed with a recovery time of 4 ns
  • Low leakage current for efficient signal handling
  • Ultra-small SMD plastic package with visible and solderable side pads
  • Suitable for automatic optical inspection of solder joints

Diode Arrays Applications

  • High-speed switching circuits
  • General-purpose switching applications
  • Reverse polarity protection

Diode Arrays Procurement Notes

Verify the specific suffix Z against official Nexperia documentation to confirm reel packaging details. Ensure compatibility with DFN1110D-3 footprint requirements during PCB layout. Confirm RoHS compliance status through the manufacturer's latest datasheet or environmental declaration before finalizing procurement plans.

Diode Arrays Selection Notes

Select this component when space constraints require an ultra-small package with solderable side pads for enhanced mechanical stability. Choose this part for applications demanding high-speed performance with minimal capacitance. Verify that the 90 V reverse voltage rating meets the circuit's peak inverse voltage requirements.

Diode Arrays Part Context

This component belongs to the BAV99 series of dual series high-speed switching diodes. It utilizes the DFN1110D-3 package, also known as SOT8015, which is a JEDEC MO340-BA standard. The series is designed for compact electronic designs requiring reliable switching performance in a minimal footprint.

Diode Arrays Replacement Considerations

Consult official Nexperia substitution guides for verified equivalents. Generic replacements may not match the specific DFN1110D-3 package dimensions or side-pad solderability features.

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