Diode Arrays BAV99QC-QZ product image

BAV99QC-QZ

$0.20
  • Description:DIODE ARRAY GP 100V DFN1412D-3
  • Series:BAV99

SKU:6efc6a23e0fe Category: Brand:

  
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BAV99QC-QZ is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is DIODE ARRAY GP 100V DFN1412D-3. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for BAV99QC-QZ

  • Description:DIODE ARRAY GP 100V DFN1412D-3
  • Series:BAV99
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Configuration:1 Pair Series Connection
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):215mA (DC)
  • Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):4 ns
  • Current - Reverse Leakage @ Vr:500 nA @ 80 V
  • Operating Temperature - Junction:150°C
  • Mounting Type:Surface Mount, Wettable Flank
  • Package / Case:3-XDFN Exposed Pad
  • Supplier Device Package:DFN1412D-3
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for BAV99QC-QZ

BAV99QC-QZ

Diode Arrays Overview

The Nexperia BAV99QC-QZ is a dual series high-speed switching diode housed in an ultra-small DFN1412D-3 (SOT8009) leadless surface-mount package. It features a peak reverse voltage of 85 V, a maximum forward current of 215 mA, and a peak non-repetitive forward surge current of 9.1 A. The device exhibits a fast recovery time of 0.8 µs, a low maximum forward voltage of 1.25 V, and a minimal leakage current of 5 nA. With a power dissipation rating of 595 mW and a maximum junction capacitance of 2 pF, it operates within a temperature range of -55 °C to +150 °C.

Diode Arrays Feature Summary

  • Dual series configuration for compact circuit integration
  • High switching speed with low leakage current
  • Qualified for automotive applications per AEC-Q101 standards
  • Ultra-small footprint suitable for space-restricted designs

Diode Arrays Applications

  • High-speed switching circuits
  • General-purpose switching tasks
  • Reverse polarity protection
  • Space-restricted electronic applications

Diode Arrays Procurement Notes

Verify the specific suffix QZ against official Nexperia documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with automated optical inspection processes due to the leadless side-wettable flank design. Confirm that the 85 V reverse voltage rating meets your circuit requirements, as this differs from standard 100 V variants in the BAV99 family.

Diode Arrays Selection Notes

Select this component when automotive qualification via AEC-Q101 is mandatory alongside minimal physical footprint constraints. The DFN1412D-3 package offers a smaller area than conventional SOT-23 devices while maintaining robust thermal performance. Consider the 0.8 µs recovery time for applications where moderate switching speeds are sufficient, distinguishing it from faster nanosecond-range alternatives.

Diode Arrays Part Context

This part belongs to the BAV99QC-Q family of dual series high-speed switching diodes manufactured by Nexperia. It utilizes the SOT8009 leadless plastic package designed for surface-mount technology. The product line targets automotive and consumer electronics markets requiring reliable discrete components with strict size limitations and high reliability standards.

Diode Arrays Replacement Considerations

BAV99QAZ: Dual series switching diode in DFN1010D-3 package with 100 V rating and 4 ns recovery time.

Diode Arrays FAQ

What is the peak reverse voltage rating for the BAV99QC-QZ?

The peak reverse voltage is rated at 85 V.

Does the BAV99QC-QZ meet automotive reliability standards?

Yes, the device is qualified according to the AEC-Q101 standard for automotive applications.

What is the maximum operating junction temperature?

The maximum operating temperature is +150 °C.

BAV99QC-QZBAV99QC-QZ
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